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2N5015/5TX 参数 Datasheet PDF下载

2N5015/5TX图片预览
型号: 2N5015/5TX
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN]
分类和应用: 晶体管
文件页数/大小: 2 页 / 123 K
品牌: SSDI [ SOLID STATES DEVICES, INC ]
 浏览型号2N5015/5TX的Datasheet PDF文件第1页  
2N5015  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristic 3/  
Symbol  
BVCER  
Min  
Typ  
Max  
Units  
Collector – Emitter Breakdown Voltage  
(IC = 200 µADC, RBE = 1 K)  
1000  
1000  
5
1300  
––  
V
Collector–Base Breakdown Voltage  
(IC = 200 µADC)  
BVCBO  
BVEBO  
-
––  
––  
V
V
Emitter–Base Breakdown Voltage  
(IE = 50 µADC)  
7
Collector Cutoff Current (VCB = 760 V)  
––  
––  
0.08  
6
12  
100  
ICBO  
IEBO  
hFE  
µAdc  
µA  
(VCB = 760 V, TC = 100°C)  
Emitter Cutoff Current (VEB= 4V)  
0.003  
20  
DC Current Gain 4/ (IC = 5 mADC, VCE = 10 VDC)  
(IC = 20 mADC, VCE = 10 VDC)  
Collector – Emitter Saturation Voltage 4/  
(IC = 20 mADC, IB = 5 mADC)  
Base – Emitter Saturation Voltage 4/  
(IC = 20 mADC, IB = 5 mADC)  
10  
30  
70  
80  
180  
1.8  
––  
VCE(Sat)  
VBE(Sat)  
fT  
––  
––  
20  
––  
0.07  
0.7  
Vdc  
1.0  
––  
30  
Vdc  
MHz  
pF  
Current Gain Bandwidth Product  
(IC = 20 mADC, VCE = 10 VDC, f = 20 MHz)  
25  
Output Capacitance  
(VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz)  
Cob  
12.5  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
VCC= 125 VDC,  
td  
tr  
ts  
tf  
––  
––  
––  
––  
50  
100  
1500  
450  
200  
1200  
3000  
800  
IC= 100 mADC,  
IB1= 20 mADC  
IB2= 20 mADC  
pw= 2 us  
nsec  
Case Outline: TO-39  
PIN 1: EMITTER  
Case Outline: TO-5  
PIN 1: EMITTER  
PIN 2: BASE  
PIN 2: BASE  
PIN 3: COLLECTOR  
PIN 3: COLLECTOR  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0043E  
DOC