SFAF1601G-SFAF1608G
RATINS AND CHARACTERISTIC CURVES (SFAF1601G THRU SFAF1608G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
20
1000
16
12
8
100
TJ=1000C
TJ=750C
4
10
0
0
50
100
150
CASE TEMPERATURE. (oC)
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
TJ=250C
250
Tj=250C
200
150
0.1
8.3ms Single Half Sine Wave
JEDEC Method
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
50
0
100
30
1
2
5
10
20
50
100
AF1606G
10
NUMBER OF CYCLES AT 60Hz
AF1604G
AF1605G~SF
SF
FIG.4- TYPICAL JUNCTION CAPACITANCE
Tj=250C
3
1
AF1608G
300
AF1601G~SF
SF
AF1607G~SF
250
200
SF
0.3
0.1
SF
AF1601G
150
100
50
~S
F
SF
AF1605G
A
F1604G
Tj=25oC
Pulse Width=300
1% Duty Cycle
0.03
0.01
~SF
s
AF1608G
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
1
2
5
20
50
100 200
500
1000
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
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the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
04/13/2007 Rev.1.00
www.SiliconStandard.com
3
SSC [ SILICON STANDARD CORP. ]
