SF11G - SF18G
RATINGS AND CHARACTERISTIC CURVES
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
FIG.2- MAXIMUM AVERAGE
FORWARD CURRENT DERATING
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
1.5
+0.5A
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
(-)
DUT
1.0
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
0.5
(+)
NON
INDUCTIVE
0
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
25 50 75 100 125 150 175
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
AMBIENT TEMPERATURE. (oC)
FIG.3- TYPICAL REVERSE CHARACTERISTICS
FIG.4- TYPICAL FORWARD CHARACTERISTICS
o
100.0
10.0
1.0
1000
100
Tj=1500C
1G~SF14G
SF1
SF15G~SF16G
10
SF17G~SF18G
Tj=1250C
0.1
.01
1
Tj=250C
Tj=25oC
Pulse Width=300
1% Duty Cycle
s
.1
0
20
40
60
80
100
120
140
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
FIG.6- TYPICAL JUNCTION CAPACITANCE
70
60
30
25
20
50
40
30
20
8.3ms Single Half Sine Wave
JEDEC Method
Tj=250C
10
5
10
1
2
5
10
20
50
100
.1 .2
.5
1
2
5
10 20
50 100 200
500 1000
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE. (V)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
6/12/2006 Rev.3.01
www.SiliconStandard.com
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