SS6580/L
n TEST CIRCUIT
Refer to TYPICAL APPLICATION CIRCUIT.
n ELECTRICAL CHARACTERISTICS (VCC=12V, T =25°C, unless otherwise
A
specified.)
PARAMETER
TEST CONDITIONS
UGATE Open
SYMBOL MIN. TYP. MAX. UNIT
VCC Supply Current
Nominal Supply
IVCC
2
mA
V
Power-On Reset
VCC Threshold
VOCSET=4.5V
9.5
Oscillator
Frequency
Duty Cycle
200
88
KHz
%
Internal Reference Voltage
Reference Voltage
SS6580
SS6580L
1.96
1.27
2.00
1.30
2.04
1.33
V
Error Amplifier
DC Gain
76
11
6
dB
Gain-Bandwidth Product
Slew Rate
GBW
SR
MHz
V/mS
Comp=10pF
Gate Driver
Upper Gate Source
Upper Gate Sink
RUGATE
RUGATE
7
5
W
W
Protection
OCSET Current Source
SS Current
VOCSET =4.5VDC
IOCSET
ISS
200
10
mA
mA
Shutdown
Shutdown Low Input
Shutdown High Input
Shutdown Mode Current
VINL
VINH
0.35
1
V
V
2
mA
Rev.2.01 6/26/2003
www.SiliconStandard.com
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