S1A – S1M
MAXIMUM RATINGS (TA=25℃ unless otherwise specified)
Parameter
Symbols S1A
S1B
S1D
S1G
S1J
S1K
S1M Units
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
50
35
50
100
200
400
600
800
560
800
1000 Volts
Maximum RMS voltage
70
140
200
280
400
1.0
420
600
700
Volts
Maximum DC blocking voltage
100
1000 Volts
Amp
Maximum average forward rectified current
(see fig.1)
IF(AV)
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated
load(JEDEC Method) TL =110℃
IFSM
40.0
1.0
30.0
Amps
Maximum instantaneous forward voltage at
1.0A
VF
IR
1.10
Volts
uA
5.0
Maximum DC reverse current @TA =25℃
at rated DC blocking voltage
@TA=125℃
50
1.0
12
Typical reverse recovery time at
IF =0.5A, IR=1.0A, Irr =0.25A
uS
pF
trr
Typical junction capacitance at 4.0V, 1MHz
Typical thermal resistance (NOTE 1)
CJ
R
75
27
85
30
℃/W
RJL
Operating junction temperature range
Storage temperature range
TJ
-55 to +150
-55 to +150
℃
℃
TSTG
NOTE:
1.
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with
0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
01/01/2007 Rev. 2.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
