P6SMB Series
(TA = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
Test
Stand-Off
Maximum
Maximum
Maximum
Maximum
Temperature
PPM
Voltage at I Coefficient
Breakdown Voltage
Device Device
BR
V
Current Voltage Reverse Leakage Peak Pulse
Clamping
Marking (Volts) (Note 1)
T
WM
V
WM
at V
RSM
Current I
@I
Code
D
I
C
BR
Min
Max
(mA)
(Volts)
(uA)
(Note 2)(Amps)
V (Volts)
of V (%/°C)
P6SMB91
MUJ
MVJ
MWJ
MXJ
MYJ
MZJ
NDJ
NEJ
NFJ
NGJ
NHJ
NKJ
NLJ
NMJ
NNJ
NPJ
NQJ
NRJ
NSJ
NTJ
81.9
86.5
100.0
95.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
73.7
77.8
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
4.8
5.0
4.3
4.5
3.9
4.1
3.6
3.8
3.3
3.5
2.9
3.0
2.7
2.8
2.5
2.6
2.4
2.5
2.1
2.2
131.0
125.0
144.0
137.0
158.0
152.0
173.0
165.0
187.0
179.0
215.0
207.0
230.0
219.0
244.0
234.0
258.0
246.0
287.0
274.0
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
P6SMB91A
P6SMB100
P6SMB100A
P6SMB110
P6SMB110A
P6SMB120
P6SMB120A
P6SMB130
P6SMB130A
P6SMB150
P6SMB150A
P6SMB160
P6SMB160A
P6SMB170
P6SMB170A
P6SMB180
P6SMB180A
P6SMB200
P6SMB200A
90.0
110.0
105.0
121.0
116.0
132.0
126.0
143.0
137.0
165.0
158.0
176.0
168.0
187.0
179.0
198.0
189.0
220.0
210.0
81.0
95.0
85.5
99.0
89.2
105.0
108.0
114.0
117.0
124.0
135.0
143.0
144.0
152.0
153.0
162.0
162.0
171.0
180.0
190.0
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
Notes:
1. VBR measured after IT applied for 300us, IT=square wave pulse or equivalent.
2. Surge current waverform per Figure 3 and derate per Figure 2.
3. For bi-directional types having VWM of 10 volts and under, the ID limit is doubled.
4. For bi-directional use, add C or CA suffix.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
11/26/2005 Rev.3.01
www.SiliconStandard.com
3 of 5