MBR20100CT, MBRF20100CT
& MBRB20100CT Series
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
( TC = 25oC unless otherwise noted )
Parameter
Symbol
MBR2090CT
MBR20100CT
Unit
Maximum repetitive peak reverse voltage
VRRM
VRWM
VDC
90
90
90
100
100
100
Volts
Volts
Volts
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward
rectified current at TC=133oC
Total device
Per leg
20
10
IF(AV)
IFSM
Amps
Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
150
Peak repetitive reverse current per leg at tp = 2.0us, 1KHz
IRRM
0.5
Amp
Voltage rate of change (rated VR)
dv/dt
10,000
V/us
Maximum instantaneous forward voltage per leg (Note 4)
at IF=10A, TC=25oC
0.80
0.65
0.95
0.75
at IF=10A, TC=125oC
VF
Volts
at IF=20A, TC=25oC
at IF=20A, TC=125oC
Maximum reverse current per TJ=25oC
leg at working peak reverse
voltage (Note 4)
100
6.0
uA
IR
TJ=100oC
mA
RθJA
RθJC
MBR 60 / MBRF - / MBRB 60
MBR 2 / MBRF 3.5 / MBRB 2
Typical thermal resistance per leg
oC/W
Volts
4500 (Note 1)
3500 (Note 2)
1500 (Note 3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH < 30%
VISOL
Operating junction temperature range
Storage temperature range
TJ
-55 to +150
-55 to +150
oC
oC
TSTG
02/08/2007 Rev.1.00
www.SiliconStandard.com
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