MB2S thru MB10S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25oC unless otherwise noted)
Parameter
Symbols
MB2S
MB4S
MB6S
MB8S
MB10S
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
Maximum DC blocking voltage
1000
Maximum average forward output rectified current
(1)
(see Fig.1)
on glass-epoxy P.C.B.
on aluminum substrate
IF(AV)
0.5
0.8
Amp
(2)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
35.0
Amps
Rating for fusing (t < 8.3ms)
I2t
5.0
1.0
A2sec
Volt
Maximum instantaneous forward voltage drop per leg at 0.4A
VF
Maximum DC reverse current at
rated DC blocking voltage per leg
TA = 25oC
5.0
100
uA
IR
TA = 125oC
(1)
RθJA
RθJA
RθJL
85
70
20
(2)
Typical thermal resistance per leg
oC/W
(1)
pF
Typical junction capacitance per leg at 4.0V, 1.0MHz
Operating junction and storage temperature range
CJ
13
TJ, TSTG
-55 to +150
oC
Notes:
1. On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
2. On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
12/23/2007 Rev.1.00
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
