FRA801G thru FRA807G
(FRA801G THRU FRA807G)
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
10
8
100
40
Tj=1250C
6
10
4
4
Tj=750C
2
2
1
0
0
50
100
150
CASE TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0.4
0.2
150
125
100
75
Tj=250C
TJ=1250C
0.1
8.3ms Single Half Sine Wave
JEDEC Method
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
400
25
200
100
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
40
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
100
80
60
40
20
0
20
10
Tj=250C
f=1.0MHz
Vsig=50mVp-p
4
2
1
0.4
Tj=25oC
Pulse Width=300
1% Duty Cycle
s
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
0.5
1
5
10
50
100
500 1000
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
10W
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
09/18/2007 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
