ES1M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
ES
1A
ES
1B
ES
1C
ES
1D
ES
1F
ES
1G
ES
1J
ES
1K
ES
1M
Parameter
Symbols
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current
See Fig. 1
I
1.0
Amp
(AV)
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
30.0
Amps
Volts
Maximum instantaneous forward voltage @ 1.0A
VF
IR
0.95
10
1.3
1.7
Maximum DC reverse current
at rated DC blocking voltage
@ TA=25oC
5.0
100
uA
uA
@ TA=100oC
nS
pF
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
trr
35
CJ
8
RθJA
RθJL
85
35
Typical thermal resistance (Note 3)
oC/W
Operating junction temperature range
Storage temperature range
TJ
-55 to +150
-55 to +150
oC
oC
TSTG
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Area.
07/04/2007 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
