EGP10D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 oC ambient temperature unless otherwise specified.
EGP
10A
EGP
10B
EGP
10C
EGP
10D
EGP
10F
EGP
10G
Parameter
Symbol
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Volts
Volts
Volts
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55oC
IF(AV)
1.0
Amp
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
VF
IR
30.0
Amps
Volts
uA
Maximum instantaneous forward voltage at 1.0A
0.95
22.0
1.25
15.0
Maximum DC reverse current
at rated DC blocking voltage
@TA=25oC
5.0
100
@TA=125oC
Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
nS
trr
50
I
pF
oC/W
oC
Typical junction capacitance at 4.0 V, 1 MHz
Typical thermal resistance (Note 1)
CJ
RθJA
50.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes:
1. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length
2. Pulse test: 300us pulse width, 1% duty cycle
07/11/2007 Rev.1.00
www.SiliconStandard.com
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SSC [ SILICON STANDARD CORP. ]
