S3PDB130
Three Phase Rectifier Modules
Symbol
Test Conditions
Characteristic Values
Unit
VR=VRRM; TVJ=25oC
VR=VRRM; TVJ=TVJM
< 0.3
_
_
< 5
IR
mA
IF=300A; TVJ=25oC
< 1.9
0.8
4
V
V
_
VF
VTO
rT
For power-loss calculations only
TVJ=TVJM
m
per diode
per module
0.9
0.15
K/W
K/W
RthJC
RthJK
per diode
per module
1.08
0.18
Creeping distance on surface
Creepage distance in air
10
9.4
50
mm
mm
m/s2
dS
dA
a
Max. allowable acceleration
FEATURES
APPLICATIONS
ADVANTAGES
* Package with screw terminals
* Isolation voltage 3000 V~
* Planar passivated chips
* Blocking voltage up to 1800 V
* Low forward voltage drop
* Supplies for DC power equipment
* Input rectifiers for PWM inverter
* Battery DC power supplies
* Field supply for DC motors
* Easy to mount with two screws
* Space and weight savings
* Improved temperature and power
cycling
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
