S1PHB55
Single Phase Half Controlled Bridge With Free Wheeling Diode
Symbol
Test Conditions
Characteristic Values
Unit
5
mA
V
TVJ=TVJM; VR=VRRM; VD=VDRM
IT=80A; TVJ=25oC
IR, ID
VT
1.64
0.85
11
For power-loss calculations only
V
VTO
rT
m
VD=6V;
TVJ=25oC
TVJ=-40oC
1.5
1.6
V
VGT
IGT
VD=6V;
TVJ=25oC
100
200
mA
TVJ=-40oC
TVJ=TVJM;
VD=2/3VDRM
TVJ=25oC
0.2
5
V
VGD
IGD
IL
mA
mA
450
tp=10us; IG=0.45A;
diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
200
2
mA
us
IH
tgd
tq
IG=0.45A; diG/dt=0.45A/us
TVJ=TVJM; IT=20A; tp=200us; VR=100V
VD=2/3VDRM; dv/dt=15V/us; di/dt=-10A/us
typ.
250
us
per thyristor/Diode; DC
per module
0.9
0.18
K/W
K/W
RthJC
RthJK
per thyristor/Diode; DC
per module
1.1
0.22
Creeping distance on surface
Creepage distance in air
16.1
7.1
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
