S1PHB50GKXXB
Single Phase Half Controlled Bridge Modules With Free Wheeling Diode
70
A
300
A
103
A2s
50Hz, 80% VRRM
VR = 0 V
60
250
IF SM
typ.
I2t
IF
TVJ = 45 C
50
40
30
20
10
0
TVJ = 45 C
200
150
100
5 0
0
max.
T
TVJ
VJ = 125 C
TVJ = 125
C
=
25 C
102
TVJ = 125 C
101
0.0
0.5
1.0
1.5
2.0
0.0 0 1
0.0 1
0 .1
1
1
2
t
3
4
5
6 7 10
ms
s
V
VF
t
t
Fig. 3 Forward current versus voltage
drop per diode
I2
versus time per diode
Fig. 5
Fig. 4 Surge overload current
50
A
120
W
RthHA
:
100
40
Id(A V)M
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
Ptot
80
60
40
20
0
30
20
10
0
0
20
30
40
50
A
0
20 40 60 80 100 120 ˚1C40
0
20 40 60 80 100 120 ˚C
Tamb
IF(A VM)
TH
Fig. 6 Power dissipation versus direct output current and ambient temperature
2.0
Fig. 7 Max. forward current versus
heatsink temperature
K/W
1 .5
ZthJH
1.0
0.5
0.0
Constants for ZthJH calculation:
i
Rthi (K/W)
0.005
ti (s)
1
2
3
4
0.008
0.05
0.2
0.875
0.47
0.06
0.25
0.001
0.01
0.1
1
s
10
t
Fig. 8 Transient thermal impedance junction to heatsink
P3
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
