MBR2*80
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
100
A
10000
10000
mA
pF
CT
TVJ=150°C
1000
IR
IF
125°C
100°C
75°C
100
10
1
10
1000
TVJ
=
150°C
125°C
25°C
50°C
25°C
TVJ= 25°C
1
0.0
100
0.1
0.2
0.4
0.6
VF
0.8
0
10
20
30
VR
40
V
0
10
20
30
40
VR
50
V
V
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
80
W
70
120
A
100
IF(AV)
60
P(AV)
80
60
50
d =
DC
0.5
40
d=0.5
DC
30
20
10
0
0.33
0.25
0.17
0.08
40
20
0
A
80
0
20
40
60
0
40
80
120
160
°C
TC
IF(AV)
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
1
K/W
D=0.5
ZthJC
0.33
0.25
0.17
Single Pulse
0.08
0.1
DSS2x81-0045B
0.05
0.001
0.01
0.1
1
10
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
