HUR2x30-100, HUR2x30-120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
HUR2x30-100
HUR2x30-120
V
RSM
V
1000
1200
V
RRM
V
1000
1200
P
Q
R
S
T
U
V
W
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
T
C
=25
o
C
50/60Hz, RMS
_
I
ISOL
<1mA
o
Test Conditions
T
C
=70 C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
T
VJ
=25
o
C; non-repetitive; I
AS
=12A; L=180uH
V
A
=1.25
.
V
R
typ.; f=10kHz; repetitive
Maximum Ratings
70
30
200
14
1.2
-40...+150
150
-40...+150
110
2500
1.1-1.5/9-13
1.1-1.5/9-13
30
Unit
A
A
mJ
A
o
C
W
V~
Nm/lb.in.
g
mounting torque (M4)
terminal connection torque (M4)
typical
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
