BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
Fig. 1: Maximum power dissipation versus R MS
on-state current (full cycle).
Fig. : 2R MS on-state current versus case
temperature (full cycle).
P
(W)
IT(R MS ) (A)
7
8
7
6
5
4
3
2
1
0
BTB
6
5
4
3
2
1
BTA
IT(R MS )(A)
3
Tc(°C)
0
0
25
50
75
100
125
0
1
2
4
5
6
Fig. :3 R elative variation of thermal impedance
versus pulse duration.
Fig.
values).
: 4On-state characteristics (maximum
ITM (A)
K =[Zth/R th]
100
10
1
1E +0
Tj max.
Tj=Tj max
Vto
R d
=
=
0.8V5
60 Ωm
Zth(j-c)
1E -1
Zth(j-a)
VTM(V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
tp(s )
1E +0
1E -2
1E -3
1E -2
1E -1
1E +1
1E +2 5E +2
Fig. : 5 S urge peak on-state current versus
number of cycles.
Fig.
current for
: 6Non-repetitive surge peak on-state
sinusoidal pulse with width
a
tp < 10ms, and corresponding value of I²t.
ITS M (A),I²t (A²s )
1000
ITS M (A)
70
Tj initial=25°C
60
t=20ms
dI/dt limitation:
50A/µs
One cycle
50
ITS M
Non repetitive
Tj initial=25°C
40
100
30
R epetitive
Tc=105°C
20
I²t
tp (ms )
10
Number of yccles
10
0
0.01
0.10
1.00
10.00
1
10
100
1000
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
