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BTA10 参数 Datasheet PDF下载

BTA10图片预览
型号: BTA10
PDF下载: 下载PDF文件 查看货源
内容描述: 离散双向可控硅(非隔离/隔离) [Discrete Triacs(Non-Isolated/Isolated)]
分类和应用: 可控硅
文件页数/大小: 4 页 / 257 K
品牌: SIRECT [ Sirectifier Global Corp. ]
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BTB/BTA10  
Discrete Triacs(Non-Isolated/Isolated)  
Fig. 1: Maximum power dissipation versus R MS  
on-state current (full cycle).  
Fig. 2: R MS on-state current versus case  
temperature (full cycle).  
P
(W)  
IT(R MS ) (A)  
12  
11  
10  
9
8
7
6
5
4
3
13  
12  
11  
10  
9
B TB  
B TA  
8
7
6
5
4
3
2
1
0
2
Tc(°C)  
IT(R MS ) (A)  
1
0
0
1
2
3
4
5
6
7
8
9
10  
0
25  
50  
75  
100  
125  
Fig. 3: R elative variation of thermal impedance  
versus pulse duration.  
Fig. 4: On-state characteristics (maximum  
values).  
ITM (A)  
100  
K =[Zth/R th]  
1E +0  
Tj max  
Tj max.  
Vto  
R d  
=
=
0.8V5  
40 Wm  
Zth(j-c)  
1E -1  
10  
1
Zth(j-a)  
Tj=25°C  
tp (s )  
1E +0  
VTM (V)  
1E -2  
1E -3  
1E -2  
1E -1  
1E +1  
1E +2 5E +2  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Fig. 5: S urge peak on-state current versus  
number of cycles.  
Fig. 6: Non-repetitive surge peak on-state  
current for  
a
sinusoidal pulse with width  
tp < 10ms, and corresponding value of I²t.  
ITS M (A),It² (As² )  
1000  
ITS M (A)  
110  
100  
Tj initial=25°C  
90  
80  
t=20ms  
dI/dt limitation:  
50A/µs  
One cycle  
Non repetitive  
Tj initial=25°C  
ITS M  
I²t  
70  
60  
50  
40  
30  
20  
10  
0
100  
R epetitive  
Tc=95°C  
tp (ms )  
Number of yccles  
10  
0.01  
0.10  
1.00  
10.00  
1
10  
100  
1000