VX-2 Series Power MOSFET
2SK2180 ( F3V50VX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
500
V
μA
IDSS
IGSS
gfs
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 1.5A, VDS = 10V
250
±0.1
0.9
2.5
2.1
1.8
3.0
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 1.5A, VGS = 10V
2.3
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forwade Voltage
Theｒmal Resistance
VTH
VSD
ID = 0.3mA, VDS = 10V
IS = 1.5A, VGS = 0V
θjc junction to case
3.12 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 400V, VＧＳ ＝ 10V, ID = 3A
15
400
30
90
45
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 10V, VGS = 0V, f = 1MHZ
ID = 1.5A, VGS = 10V, RL = 100Ω
pF
80
ns
Turn-Off Time
toff
90
140
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SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
