VR Series Power MOSFET
2SK1931 ( F5E20 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
200
V
μA
IDSS
IGSS
gfs
VDS = 200V, VGS = 0V
250
±0.1
1.8
0.45 0.65
VGS = ±30V, VDS = 0V
ID = 2.5A, VDS = 10V
0.9
2
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 2.5A, VGS = 10V
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
VTH
VSD
ID = 1mA, VDS = 10V
3
4
1.5
IS = 2.5A, VGS = 0V
θjc junction to case
6.25 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VGS = 10V, ID = 5A, VDD = 150V
11
360
45
190
55
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 10V, VGS = 0V, f = 1MHZ
ID = 2.5A, VGS = 10V, RL = 40Ω
pF
110
150
ns
Turn-Off Time
toff
75
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SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
