GM1BW78140A
■ Absolute Maximum Ratings
Tc = 25°C
Unit
mW
mA
Parameter
Power dissipation *1
Forward current *1
Symbol
P
Rating
840
IF
200
Reverse voltage
VR
-5
V
Operating temperature *2
Storage temperature*3
Soldering temperature *4
Tc
-30 to +85
-40 to +100
250
°C
Tstg
Tsol
°C
°C
1 Operating Current values follow the Derating Curves.
*
*
*
*
2 Cathode temperature is measured on the back of the chip pad.
3 Do not exceed specified temperature range under any packing condition.
4 This device uses the solder pads for heat sinking, therefore the
Operating Temperature range is prescribed by Tc.
■ Electro-optical Characteristics
Tc = 25°C
Parameter
Forward voltage
Symbol
Conditions
MIN.
TYP.
3.5
MAX.
Unit
V
VF
Iv
φv
x
4.2
Luminous intensity *1
Luminous flux *2
4.8
9.5
cd
IF = 150 mA
(20)
(39)
0.35
0.36
lm
Chromaticity coordinates *3
y
Reverse current
IR
VR = 4 V
100
µA
1 Measured by EG&G Model 550 (Radiometer/Photometer) after 20 ms drive (Tolerance: 15%) Also see Luminous Intensity Ranking.
2 Monitored by 6-inch integrating sphere of Sharp Standard. Product mounted on special substrate for monitoring.
3 Measured by Otsuka Electronics Model MCPD-LE3400 (Tolerance: x, y: 0.02) Also see Chromaticity Ranking.
4 Parenthesis indicates reference values.
*
*
*
*
■ Derating Curve
Fig. 2 Thermal Resistance
Junction
Cathode Terminal
Ambient
Fig. 1 Forward Current vs.
Cathode Temperature
250
1
2
Tj
Tc
Ta
NOTES:
1 Junction to Cathode: 25°C/W (Reference)
200
2 Cathode to Ambient: Thermal resistance
will vary depending on substrate structure
150
100
50
GM1BW78140A-4
0
-30
-5
20
45
70
75
95
Cathode Temperature Tc (°C)
GM1BW78140A-3
Sheet No. DG-085021
July 30, 2008
3
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
