Hologram Lasers
GH5R495A3C
❇ Electro-optical Characteristics of Laser Diode (Design Standard*)
(TC=25˚C)
Parameter
Symbol
∆ηd
θ//
Conditions
MIN.
TYP.
MAX.
40
Unit
Stability of differential efficiency
Po=10 to 135mW
-
8
-
9
17
-
%
Parallel
10
˚
Half intensity angle
θ
Perpendicular
Parallel
15
-2
-3
-1
-
19
˚
Po=95mW
ø//
+2
˚
Emission
characteristics
Beam shift
Kink
Deviation
angle
ø
Perpendicular
-
+3
˚
∆ø//
K-LI
ø//(95mW)-ø//(3mW)
-
+1
˚
P1=27mW, P2=81mW, P3=135mW
-
15
%
❇
Electro-optical Characteristics of OPIC for Signal Detection❇9
(TC=25˚C, VCC=5V, Vref=2.1V)
❇10
Segment
Parameter
Symbol
ICC1
Conditions
MIN.
TYP.
20
30
2
MAX.
25
Unit
mA
mA
mV
mV
High gain, Gain switching SW=H
Low gain, Gain switching SW=L
Common to high/ low gain, No light
Common to high/ low gain
-
-
Supply current
ICC2
35
❇11
Output offset voltage
Vod
-25
-30
+25
+30
A, B
A, B
∆Vod
Offset voltage difference, Gain switching
-
❇9
0.1µF or more capacitor should be added between OPIC power supply terminal and GND, Vref terminal and GND. (at the position of 10mm
or less from the lead base)
Applicable divisions correspond to output terminals.
A : VA, VB, VC, VD
❇10
B : VE+G, VF+H
❇11
Difference from Vref
❇ Electro-optical Characteristics of Hologram Laser (Design Standard*)❇1
(TC=25˚C)
Parameter
Symbol
Conditions
MIN.
TYP.
14
MAX.
Unit
µm
❇2
−
−
Focal error signal capture range
Focal error signal sensitivity
-
-
-
-
-
-
%/ µm
13
❇1
Actuator
Collimated lens
Disc
Laser driver
ACC drive
(SONY : YEDS-18)
Hologram laser
NA=0.186
NA=0.50
f =10.74mm
f =3.0mm
Measuring System of Hologram Laser
❇2
* These parameters are not guaranteed performance, but general specifications of each optical element which makes up a hologram laser.
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
109
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