ELECTRICAL CHARACTERISTICS : VS = +5V
(At RL = 100kΩ connected to Vs/2,and VOUT = Vs/2, unless otherwise noted)
SGM321/358/324
PARAMETER
CONDITION
TYP
MIN/MAX OVER TEMPERATURE
-40℃
+25℃
+25℃
to 85℃
UNITS
MIN / MAX
INPUT CHARACTERISTICS
±0.8
±5
±5.6
Input Offset Voltage (VOS
Input Bias Current (IB)
)
mV
pA
MAX
TYP
TYP
TYP
MIN
MIN
MIN
MIN
TYP
10
Input Offset Current (IOS
Common-Mode Voltage Range (VCM
Common-Mode Rejection Ratio(CMRR)
)
10
pA
)
VS = 5.5V
- 0.1 to + 5.6
V
VS = 5.5V, VCM = - 0.1V to 4 V
VS = 5.5V, VCM = - 0.1V to 5.6 V
RL = 5KΩ,Vo = 0.1V to 4.9V
70
68
80
84
2.7
62
56
70
80
62
55
70
80
dB
dB
Open-Loop Voltage Gain( AOL
)
dB
RL =100KΩ,Vo = 0.035V to 4.965V
dB
Input Offset Voltage Drift (∆VOS/∆T)
µV/℃
OUTPUT CHARACTERISTICS
Output Voltage Swing from Rail
RL = 100KΩ
RL = 10KΩ
0.008
0.08
23
V
V
TYP
TYP
MIN
Output Current (IOUT
)
20
18.8
mA
POWER SUPPLY
Operating Voltage Range
2.1
5.5
2.5
5.5
V
V
MIN
MAX
Power Supply Rejection Ratio (PSRR)
Quiescent Current / Amplifier (IQ)
Vs = +2.5 V to + 5.5 V
VCM = (-VS) + 0.5
82
60
60
80
58
86
dB
µA
MIN
I
OUT = 0
MAX
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
CL = 100pF
1
MHz
V/µs
µs
TYP
TYP
TYP
TYP
G = +1 , 2V Output Step
G = +1, 2 V Output Step
VIN ·Gain = Vs
0.52
5.3
2.6
Settling Time to 0.1%( tS)
Overload Recovery Time
µs
NOISE PERFORMANCE
Voltage Noise Density (en)
nV/
Hz
f = 1kHz
27
20
TYP
TYP
nV/
f = 10kHz
Hz
Specifications subject to change without notice.
２
SGM321/358/324
SGMICRO [ Shengbang Microelectronics Co, Ltd ]
