ELECTRICAL CHARACTERISTICS
(V = +3 V ± 10%, GND = 0 V, TA = - 40°C to +125°C, unless otherwise noted. Typical values are at TA = + 25°C.)
+
SGM3003
- 40℃ to
PARAMETER
SYMBOL
CONDITIONS
MIN/
+25℃ +125℃
UNITS MAX
ANALOG SWITCH
0
V
V
MIN
MAX
TYP
MAX
TYP
MAX
Analog Signal Range
VNO, VNC, VCOM
RON
V
+
0.6
1.0
Ω
Ω
Ω
Ω
0 ≤ VNO or VNC ≤ V , ICOM = −10 mA,
Test Circuit 1
+
On-Resistance
1.3
0.4
0.18
0.3
0 ≤ VNO or VNC ≤ V+, ICOM = −10 mA,
Test Circuit 1
On-Resistance Flatness
RFLAT(ON)
LEAKAGE CURRENTS
VNO or VNC = 3V/1V, VCOM = 1V/3V,
±5
±11
±5
nA
nA
nA
nA
TYP
MAX
TYP
MAX
Source OFF Leakage current
INC(OFF), INO(OFF)
V = +3.3V ,Test Circuit 2
+
±1000
±1000
VNO or VNC = VCOM = 1V or 3V,
INC(ON), INO(ON),
Channel ON Leakage current
ICOM(ON)
V = +3.3V , Test Circuit 3
+
±11
DIGITAL INPUTS
Input High Voltage
Input Low Voltage
VINH
VINL
2.0
0.4
V
V
MIN
MAX
TYP
±0.01
±0.1
µA
µA
Input Current
IINL or IINH
VIN = VINH or VINH
±1
MAX
DYNAMIC CHARACTERISTICS
VNO or VNC = 2V,
RL = 300Ω, CL = 35pF, Test Circuit 4
Turn-On Time
tON
32
ns
TYP
VNO or VNC = 2V,
Turn-Off Time
tOFF
Q
20
10
12
ns
pC
ns
TYP
TYP
TYP
RL = 300Ω, CL = 35pF, Test Circuit 4
CL = 1.0nF, VG = 0V, RG = 0, Test Circuit 5
VNO1 or VNC1 = VNO2 or VNC2 = 2V,
RL = 300Ω, CL = 35pF, Test Circuit 6
Charge Injection,
Break-Before-Make Time
Delay
tD
RL = 50Ω, CL = 5pF,
f = 100KHz
-55
-75
dB
dB
TYP
TYP
Off Isolation
OISO
Test Circuit 7
f = 10KHz
f = 20Hz to 20KHz, VCOM = 2VP-P,
RL = 600Ω, CL = 50pF
Total Harmonic Distortion
Bandwidth –3 dB
0.06
THD
BW
%
TYP
RL = 50Ω, CL = 5pF, Test Circuit 8
30
82
MHz TYP
Source OFF Capacitance
Channel ON Capacitance
POWER REQUIREMENTS
Power Supply Current
CNC(OFF), CNO(OFF)
CNC(ON), CNO(ON),
CCOM(ON)
pF
TYP
380
pF
TYP
0.001
µA
µA
TYP
I
+
V+ = +3.3V, VIN = 0V or 3V
1
MAX
Specifications subject to change without notice.
４
SGM3003
SGMICRO [ Shengbang Microelectronics Co, Ltd ]
