1SS404WS
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Applications
• High speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
R9
Top View
Marking Code: "R9"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
P
tot
T
J
T
s
Value
25
20
300
700
200
125
- 55 to + 125
Unit
V
V
mA
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 300 mA
Reverse Current
at V
R
= 20 V
Total Capacitance
at f = 1 MHz
Symbol
V
F
I
R
C
T
Typ.
-
-
46
Max.
0.45
50
-
Unit
V
µA
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006