1N-SS119
SILICON EPITAXIAL PLANAR DIODE
for High Speed Switching
Max. 0.45
Features
• Low capacitance
• Short reverse recovery time
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 2.9
Min. 27.5
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Current
Peak Forward Current
Non-Repetitive Peak Forward Surge Current (t = 1 s)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
d
T
j
T
S
Value
35
30
150
450
1
250
175
- 65 to + 175
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
Reverse Current
at V
R
= 30 V
Capacitance
at V
R
= 1 V, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA V
R
= 6 V,R
L
= 50
Ω
Symbol
V
F
I
R
C
t
rr
Max.
0.8
0.1
3
3.5
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
