STP16A80
Electrical Characteristics
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
2.0
mA
V
─
─
TJ = 125 °C
VTM
IT = 25 A, Inst. Measurement
Peak On-State Voltage
1.4
30
─
─
─
─
─
─
─
─
─
─
─
─
─
─
I+
Ⅰ
GT1
I -
V
V
D = 6 V, RL=10 Ω
Gate Trigger Current
30
mA
Ⅱ
GT1
I -
30
Ⅲ
Ⅰ
GT3
V+
1.5
1.5
1.5
─
GT1
V-GT1
D = 6 V, RL=10 Ω
Gate Trigger Voltage
V
Ⅱ
V-GT3
VGD
Ⅲ
─
TJ = 125 °C, VD = 1/2 VDRM
Non-Trigger Gate Voltage
0.2
V
TJ = 125 °C, [di/dt]c = -8.0 A/ms,
VD=2/3 VDRM
Critical Rate of Rise Off-State
Voltage at Commutation
(dv/dt)c
10
V/㎲
─
─
IH
Holding Current
25
mA
─
─
─
Rth(j-c)
Thermal Impedance
Junction to case
1.4
°C/W
─
2/5
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
