Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
101
Bottom: 5.0 V
150oC
25oC
100
100
-55oC
※Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※Notes :
1. 250µ s Pulse Test
2. TC = 25℃
-1
10
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
1
0
101
VGS = 10V
VGS = 20V
100
150℃
25℃
※Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※Note : T = 25℃
J
-1
10
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1500
1000
500
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 120V
VDS = 300V
C
C
iss
VDS = 480V
6
C
oss
4
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※ Note : ID = 7.0 A
0
-1
10
100
101
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
