SemiWell
Semiconductor
SBP13009A
High Voltage Fast-Switching NPN Power Transistor
Features
-
Very High Switching Speed (Typical 60ns@8.0A)
-
Minimum Lot-to-Lot hFE Variation
-
Low VCE(sat) (Typical 320mV@8.0A/1.6A)
-
Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
○
3.Emitter
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching mode power
supply.
TO-220
1
2
3
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
STG
T
J
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Peak Current ( t
P
＜
10 ms
)
Base Current
Base Peak Current ( t
P
＜
10 ms
)
Total Dissipation at T
C
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9.0
12
25
6.0
12
100
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
1.25
40
Units
°C/W
°C/W
May, 2003. Rev. 3
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