SemiWell
Semiconductor
SBP13007-O
High Voltage Fast-Switching NPN Power Transistor
Features
- High Switching Speed
- Short storge time
- Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
○
3.Emitter
General Description
TO-220
This devices is designed for high voltage, high speed switching
characteristic,especially suitable for ballast sysytem.
1
2
3
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
STG
T
J
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Peak Current ( t
P
<
5 ms
)
Base Current
Base Peak Current ( t
P
<
5 ms
)
Total Dissipation at T
C
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
June, 2006. Rev. 1
1/4