SBP13007-H2
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
CE = 700V
Collector Cut-off Current
( VBE = - 1.5V )
1.0
5.0
ICEV
-
-
mA
VCE = 700V
TC = 100 °C
Collector-Emitter Sustaining Voltage
( IB = 0 )
VCEO(sus)
IC = 10 mA
-
-
-
400
V
V
IC = 2.0A
IC = 5.0A
IB = 0.4A
IB = 1.0A
0.5
1.0
2.5
2.5
VCE(sat)
I
C = 8.0A
IB = 2.0A
-
Collector-Emitter Saturation Voltage
IC = 5.0A
IB = 1.0A
TC = 100 °C
IC = 2.0A
IC = 5.0A
IB = 0.4A
IB = 1.0A
1.2
1.6
1.5
VBE(sat)
-
-
Base-Emitter Saturation Voltage
DC Current Gain
V
I
C = 5.0A
IB = 1.0A
TC = 100 °C
IC = 2.0A
IC = 5.0A
VCE = 5V
VCE = 5V
10
5
40
40
hFE
-
I
C = 5.0A
VCC = 125V
IB2 = - 1.0A
Resistive Load
Storage Time
Fall Time
IB1 = 1.0A
-
-
ts
tf
1.5
0.17
3.0
0.4
㎲
㎲
TP = 25㎲
V
CC = 15V
B1 = 1.0A
LC = 0.35mH
IC = 5.0A
IB2 = -2.5A
Inductive Load
Storage Time
Fall Time
I
ts
tf
0.8
0.06
2.0
0.12
Vclamp = 300V
V
CC = 15V
IC = 5.0A
IB2 = -2.5A
Inductive Load
Storage Time
Fall Time
IB1= 1.0A
-
ts
tf
1.0
0.07
3.0
0.15
㎲
LC = 0.35mH
Vclamp = 300V
TC = 100 °C
※ Notes :
Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%
2/6
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
