SAMWIN
SW20N50
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Top :
15V
10V
9V
101
8V
6V
Bottom : 5.5V
101
25oC
150oC
100
-55oC
*. Notes :
1. 250us Pulse Test
2. TC = 25OC
*. Notes :
1. VDS = 50V
2. 250us Pulse Test
10-1
100
100
101
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
2.0
1.8
1.6
101
VGS = 20V
VGS = 10V
1.4
1.2
100
1.0
0.8
0.6
150OC 25OC
*. Notes :
1. VGS = 0V
*. Note : TJ = 25OC
2. 250us Pulse Test
0.4
10-1
0.2
0
5
10
15
20
25
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
3000
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
2500
2000
1500
1000
500
VDS = 400V
VDS = 250V
10
*. Notes :
1. VGS = 0V
8
2. f=1MHz
6
4
2
0
Ciss
Coss
Crss
*. Note : ID = 8.5 A
30
0
0
5
10
15
20
25
30
35
40
45
50
0
10
20
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
