SAMWIN
SW1N60L
Electrical characteristic ( TC = 25oC unless otherwise specified
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
IDSS
Drain to source breakdown voltage
Drain to source leakage current
VGS=0V, ID=250uA
600
-
-
-
-
-
1
V
VDS=600V, VGS=0V
VDS=480V, TC=125oC
VGS=30V, VDS=0V
-
-
-
uA
uA
nA
10
100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
VGS=-30V, VDS=0V
-
-
-100
nA
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=50uA
VGS=10V, ID = 0.2A
3.0
-
4.5
23
V
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
-
-
-
-
-
-
-
-
-
-
60
12
3
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
VDS=300V, ID=0.3A, RG=25Ω
VDS=480V, VGS=10V, ID=0.3A
pF
ns
12
11
40
18
4.5
1
td(off)
tf
Turn off delay time
Fall time
Qg
Total gate charge
Gate-source charge
Gate-drain charge
Qgs
Qgd
-
-
nC
3.5
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
0.3
1.2
1.5
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=0.3A, VGS=0V
-
V
Trr
112
0.3
ns
uC
IS=0.3A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 92mH, IAS = 0.3A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 0.3A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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