TIP42/42A/42B/42C
Medium Power Linear Switching Applications
- Complement to TIP41/41A/41B/41C
PNP Epitaxial
Silicon Darlington
Transistor
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage : TIP42
VCBO
-40
-60
-80
V
V
V
V
: TIP42A
: TIP42B
: TIP42C
TO-220
1. Base
2. Collector
3. Emitter
-100
Collector-Emitter Voltage : TIP42
VCEO
-40
-60
-80
V
V
V
V
: TIP42A
: TIP42B
: TIP42C
-100
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
VEBO
IC
ICP
IB
-5
-6
-10
V
A
A
1
2
3
-2
A
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
PC
PC
TJ
2
65
150
-65~150
W
W
℃
℃
TSTG
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
: TIP42
IC=-30mA, IB=0
-40
-60
-80
V
V
V
V
: TIP42A
: TIP42B
: TIP42C
-100
Collector Cut-off Current
: TIP42/42A
ICEO
VCE=-30V,IB=0
VCE=-60V,IB=0
-0.7
-0.7
㎃
㎃
: TIP42B/42C
Collector Cut-off Current
: TIP42
ICES
VCE=-40V,VEB=0
-400
-400
-400
-400
㎂
㎂
㎂
㎂
: TIP42A
: TIP42B
: TIP42C
V
V
V
CE=-60V,VEB=0
CE=-80V,VEB=0
CE=-100V,VEB=0
Emitter Cut-off Current
*DC Current Gain
IEBO
hFE
VEB=-5V,IC=0
-1
㎃
VCE=-4V,IC=-0.3A
30
15
V
CE=-4V,IC=-3A
75
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Output Capacitance
VCE(sat)
VBE(on)
fT
IC=-6A,IB=-600mA
VCE=-4V,IC=-6A
-1.5
-2.0
V
V
VCE=-10V,IC=-500mA
f=1㎒
3.0
㎒
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎ SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
