TIP41/41A/41B/41C
Medium Power Linear Switching Applications
- Complement to TIP42/42A/42B/42C
NPN Epitaxial
Silicon Darlington
Transistor
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage : TIP41
VCBO
40
60
80
V
V
V
V
: TIP41A
: TIP41B
: TIP41C
TO-220
1. Base
2. Collector
3. Emitter
100
Collector-Emitter Voltage : TIP41
VCEO
40
60
80
V
V
V
V
: TIP41A
: TIP41B
: TIP41C
100
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
5
6
10
2
2
V
A
A
1
2
3
A
W
W
℃
℃
65
150
-65~150
TSTG
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
: TIP41
IC=30mA, IB=0
40
60
80
V
V
V
V
: TIP41A
: TIP41B
: TIP41C
100
Collector Cut-off Current
: TIP41/41A
ICEO
VCE=30V,IB=0
CE=60V,IB=0
0.7
0.7
㎃
㎃
: TIP41B/41C
V
Collector Cut-off Current
: TIP41
ICES
VCE=40V,VEB=0
400
400
400
400
㎂
㎂
㎂
㎂
: TIP41A
: TIP41B
: TIP41C
V
V
V
CE=60V,VEB=0
CE=80V,VEB=0
CE=100V,VEB=0
Emitter Cut-off Current
*DC Current Gain
IEBO
hFE
VEB=5V,IC=0
1
㎃
VCE=4V,IC=0.3A
30
15
V
CE=4V,IC=3A
75
1.5
2.0
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
VCE(sat)
VBE(on)
fT
IC=6A,IB=600mA
VCE=4V,IC=6A
V
V
VCE=10V,IC=500mA,f=1㎒
Output Capacitance
3.0
㎒
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎ SEMIHOW REV.A0.Oct 2007