TIP31/31A/31B/31C
Medium Power Linear Switching Applications
- Complement to TIP32/32A/32B/32C
PNP Epitaxial
Silicon Darlington
Transistor
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage : TIP31
VCBO
40
60
80
V
V
V
V
: TIP31A
: TIP31B
: TIP31C
TO-220
1. Base
2. Collector
3. Emitter
100
Collector-Emitter Voltage : TIP31
VCEO
40
60
80
V
V
V
V
: TIP31A
: TIP31B
: TIP31C
100
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
5
3
5
1
2
V
A
A
1
2
3
A
W
W
℃
℃
40
150
-65~150
TSTG
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Max
Unit
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
: TIP31
IC=30mA, IB=0
40
60
80
V
V
V
V
: TIP31A
: TIP31B
: TIP31C
100
Collector Cut-off Current
: TIP31/31A
ICEO
VCE=30V,IB=0
CE=60V,IB=0
0.3
0.3
㎃
㎃
: TIP31B/31C
V
Collector Cut-off Current
: TIP31
ICES
VCE=40V,VEB=0
200
200
200
200
㎂
㎂
㎂
㎂
: TIP31A
: TIP31B
: TIP31C
V
V
V
CE=60V,VEB=0
CE=80V,VEB=0
CE=100V,VEB=0
Emitter Cut-off Current
*DC Current Gain
IEBO
hFE
VEB=5V,IC=0
1
㎃
VCE=4V,IC=1A
25
10
V
CE=4V,IC=3A
50
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
VCE(sat)
VBE(on)
fT
IC=3A,IB=375mA
VCE=4V,IC=3A
1.2
1.8
V
V
VCE=10V,IC=500mA,f=1㎒
Output Capacitance
3.0
㎒
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎ SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
