KSH882
Audio Frequency Power Amplifier
- Low Speed Switching
- Complement to KSH772
3 Amperes
NPN Epitaxial Silicon Transistor
1 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
TO-126
CHARACTERISTICS
SYMBOL
RATING
UNIT
1. Emitter
2. Collector
3. Base
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
*Collector Current(Pulse)
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
40
30
5
3
7
V
V
V
A
A
0.6
A
Collector Dissipation(Tc=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
PC
PC
TJ
TSTG
10
1
150
-55~150
W
W
℃
℃
1
2
3
*Plus Width≤10ms, Duty≤50%
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
SYMBOL
Test Condition
Min
Typ.
Max
1
Unit
㎂
ICBO
VCB=30V,IE=0
IEBO
VEB=3V,IC=0
1
㎂
hFE1
hFE2
VCE=2V,IC=20mA
VCE=2V,IC=1A
30
60
150
160
400
0.5
2.0
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE(sat)
fT
IC=2A,IB=0.2mA
IC=2A,IB=0.2mA
VCE=5V,IC=0.1A
0.3
1.0
90
V
V
㎒
㎊
Cob
VCB=10V,IE=0
F=1MHz
45
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
Package Mark information.
R
O
Y
60 ~ 120
S
YWW
H
SemiHow Logo
100 ~ 200
160 ~ 320
250 ~ 500
Y; year code, WW; week code
Assembly code
S YWWH Y
hFE2
Classification
KSH882
G
Y
hFE2 Classification
◎ SEMIHOW REV.A2,Mar 2008