KSH13005AF
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
4 Amperes
NPN Silicon Power Transistor
75 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
TO-220F
1. Base
CHARACTERISTICS
SYMBOL
RATING
UNIT
2. Collector
3. Emitter
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICP
IB
700
400
9
4
8
2
V
V
V
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
A
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
PC
TJ
TSTG
30
150
-65~150
W
℃
℃
1
2
3
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
SYMBOL
Test Condition
Min
Typ.
Max
Unit
V
VCEO
IC=10mA, IB=0
400
IEBO
VEB=9V,IC=0
1
㎃
*DC Current Gain
hFE1
hFE2
VCE=5V,IC=1A
VCE=5V,IC=2A
10
8
60
40
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
VCE(sat)
IC=1A,IB=0.2A
IC=2A,IB=0.5A
IC=4A,IB=1A
0.5
0.6
1
V
V
V
VBE(sat)
IC=1A,IB=0.2A
IC=2A,IB=0.5A
1.2
1.6
V
V
VCB=10V, f=0.1MHz
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Cob
65
㎊
㎒
㎲
㎲
㎲
4
ton
tstg
tF
0.8
4.0
0.9
Vcc=125V, Ic=2A
IB1=0.4A, IB2= -0.4A
RL=62.5Ω
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
Package Mark information.
S
SemiHow Symbol
R
19 ~ 28
S
hFE1
YWW
Z
YWW
Z
Y; year code, WW; week code
hFE1 Classification
O
26 ~ 35
33 ~ 40
Classification
KSH13005AF
Y
◎ SEMIHOW REV.A1,Oct 2007