KSH13009A
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
12 Amperes
NPN Silicon Power Transistor
100 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
TO-220
1. Base
CHARACTERISTICS
SYMBOL
RATING
UNIT
2. Collector
3. Emitter
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
700
400
9
12
24
V
V
V
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
6
A
1
2
3
100
150
-65~150
W
℃
℃
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
SYMBOL
VCEO(sus)
IEBO
Test Condition
Min
Typ.
Max
Unit
V
IC=10mA, IB=0
400
VEB=9V,IC=0
1
㎃
*DC Current Gain
hFE1
hFE2
VCE=5V,IC=5A
VCE=5V,IC=8A
8
6
40
30
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
VCE(sat)
IC=5A,IB=1A
IC=8A,IB=1.6A
IC=12A,IB=3A
1
1.5
3
V
V
V
VBE(sat)
IC=5A,IB=1A
IC=8A,IB=1.6A
1.2
1.6
V
V
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Cob
fT
VCB=10V, f=0.1MHz
VCE=10V,IC=0.5A
180
㎊
㎒
㎲
㎲
㎲
4
ton
tstg
tF
1.1
3
Vcc=125V, Ic=8A
IB1=1.6A, IB2= -1.6A
RL=15.6Ω
Storage Time
Fall Time
0.7
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
Package Mark information.
R
O
8 ~ 17
15~28
S
SemiHow Symbol
S
YWW
Y; year code, WW; week code
hFE1 Classification
YWW
Z
Z
hFE1
KSH13009A
Classification
26 ~ 39
Y
Y1(26~33), Y2(31~39)
◎ SEMIHOW REV.A1,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
