KSC13003A
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
1.5 Amperes
NPN Silicon Power Transistor
20 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
TO-126
1. Base
CHARACTERISTICS
SYMBOL
RATING
UNIT
2. Collector
3. Emitter
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
700
400
9
1.5
3
0.75
20
150
-65~150
V
V
V
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
A
W
℃
℃
1
2
3
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
SYMBOL
Test Condition
Min
Typ.
Max
Unit
V
VCEO
IC=5mA, IB=0
400
IEBO
VEB=9V,IC=0
10
40
㎂
*DC Current Gain
hFE1
hFE2
VCE=2V,IC=0.5A
CE=2V,IC=1A
9
5
V
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
IC=1.5A,IB=0.5A
0.5
1
3
V
V
V
VBE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
1
1.2
V
V
VCB=10V, f=0.1MHz
VCE=10V,IC=0.1A
Output Capacitance
Current Gain Bandwidth Product
Cob
fT
21
㎊
㎒
㎲
㎲
4
tstg
tF
4.0
0.7
Vcc=125V, Ic=2A
Storage Time
I
B1=0.2A, IB2= -0.2A
RL=125Ω
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
Package Mark information.
R
O
Y
9 ~ 16
S
YWW
Z
SemiHow symbol
hFE1
S YWW
KSC13003A
Z
14 ~ 21
19 ~ 26
Y; year code, WW; week code
hFE1 Classification
Classification
◎ SEMIHOW REV.A1,Oct 2007