KSB13003AR
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Electronic Ballast up to 21W
• 150
℃ Max. Operating temperature
• 8KV ESD proof at HBM (C=100㎊, R=1.5㏀)
1.5 Amperes
NPN Silicon Power Transistor
1.1 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
TO-92
CHARACTERISTICS
SYMBOL
RATING
UNIT
1. Emitter
2. Collector
3. Base
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
700
400
9
V
V
V
Collector Current(DC)
1.5
A
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Storage Temperature
ICP
IB
PC
TSTG
TJ
3
A
A
W
℃
℃
0.75
1.10
-65~150
150
3
2
1
Max. Operating Junction Temperature
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
SYMBOL
Test Condition
Min
700
400
Typ.
Max
Unit
V
VCBO
IC=500μA, IE=0
VCEO
IC=5mA, IB=0
VEB=9V,IC=0
V
IEBO
10
30
㎂
*DC Current Gain
hFE1
hFE2
VCE=2V,IC=0.5A
VCE=2V,IC=1A
9
5
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
IC=1.5A,IB=0.5A
0.5
1.0
3.0
V
V
V
VBE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
1.0
1.2
V
V
VCB=10V, f=0.1MHz
VCE=10V,IC=0.1A
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Cob
fT
21
㎊
㎒
㎲
㎲
㎲
4
ton
tstg
tF
1.1
4.0
0.7
Vcc=125V, Ic=2A
Storage Time
I
B1=0.2A, IB2= -0.2A
RL=125Ω
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
Package Mark information.
R
O
Y
9 ~ 16
R
YWW
Z
Pin type (ECB)
S
AR
1 3 0 0 3
YWW
hFE1
15 ~ 25
20 ~ 30
Y; year code, WW; week code
hFE1 Classification
Classification
Z
◎ SEMIHOW REV.A2,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
