KSB13003HR
High Voltage Switch Mode Application
• High voltage, High speed power switching
• Suitable for Electronic Ballast up to 21W
1.5 Amperes
NPN Silicon Power Transistor
1.1 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
TO-92
CHARACTERISTICS
SYMBOL
RATING
UNIT
1. Emitter
2. Collector
3. Base
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
900
530
9
1.5
3
0.75
1.10
150
-55~150
V
V
V
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
A
W
℃
℃
3
2
1
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
SYMBOL
Test Condition
Min
900
530
Typ.
Max
Unit
V
VCBO
IC=500μA, IE=0
VCEO
IC=10mA, IB=0
VEB=9.0V, IC=0
VCE=10V,IC=0.4A
V
IEBO
10
40
㎂
*DC Current Gain
hFE1
hFE2
20
6
-
-
V
CE=10V,IC=1A
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
IC=1.5A,IB=0.5A
0.8
2.5
V
V
*Base-Emitter Saturation Voltage
Output Capacitance
VBE(sat)
IC=0.5A,IB=0.1A
VCB=10V, f=0.1MHz
1.0
V
Cob
fT
21
㎊
㎒
㎲
㎲
㎲
Current Gain Bandwidth Product
Turn on Time
VCE=10V,IC=0.1A
4
ton
tstg
tF
1.1
4.0
0.7
Vcc=125V, Ic=2A
Storage Time
I
B1=0.2A, IB2= -0.2A
RL=125Ω
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note.
Package Mark information.
R
20 ~ 30
S
YWW
Z
SemiHow Symbol
S
HR
1 3 0 0 3
YWW
hFE1
O
25 ~ 35
30 ~ 40
Y; year code, WW; week code
hFE1 Classification
Classification
Z
Y
◎ SEMIHOW REV.A0,Oct 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
