Electrical Characteristics (TJ=25℃ unless otherwise specified )
Symbol
Parameter
Conditions
Min
Typ
Max
50
5
Unit
uA
mA
uA
mA
mA
V
TJ=25oC
TJ=125oC
TJ=25oC
TJ=125oC
-
-
IDRM
Repetitive Peak Off-State Current
VD = VDRM
-
-
-
-
50
5
IRRM
Repetitive Peak Reverse Current
VD = VDRM
-
-
IGT
Gate Trigger Current
VD = 12V, RL=330Ω 1+, 1-, 3-
VD = 12V, RL=330Ω 1+, 1-, 3-
VD = 12V, RL=330Ω, TJ=125oC
IT = 23A, IG = 50mA
-
-
-
-
35
1.5
-
VGT
VGD
VTM
Gate Trigger Voltage
Non-Trigger Gate Voltage1
Peak On-State Voltage
0.2
-
-
V
1.1
1.4
V
Critical Rate of Rise of Off-State
Voltage
dv/dt
IH
VD = 2/3 VDRM, TJ=125oC
IT= 0.2A
200
-
-
-
-
V/us
mA
Holding current
50
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance
Thermal Resistance
Conditions
Junction to Case
Min
Typ
Max
2.1
58
Unit
oC/W
oC/W
RθJA
Junction to Ambient
◎ SEMIHOW REV.A1,March 2013
SEMIHOW [ SEMIHOW CO.,LTD. ]
