Typical Characteristics
10
8
130
120
110
100
90
30o
180o
150o
60o
6
120o
90o
4
90o
120o
150o
180o
2
60o
30o
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
R.M.S. on state current, IT(RMS) [A]
R.M.S. on state current, IT(RMS) [A]
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
100
90
80
70
60
50
40
30
20
10
0
101
PGM(5W)
PG(AV)(0.5W)
60Hz
50Hz
100
25[oC]
I+GT1
I-GT1
I-GT3
VGD
-1
10
100
101
102
100
101
102
103
104
Time [cycles]
Gate current, IG [mA]
Fig 4. Surge on state current rating
(Non-repetitive)
Fig 3. Gate power characteristics
2
1
0
2
1
0
I+GT1
I-GT1
I-GT3
V+GT1
-
VGT1
-
VGT3
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Junction temperature, TJ [oC]
Junction temperature, TJ [oC]
Fig 5. Gate trigger current vs.
junction temperature
Fig 6. Gate trigger voltage vs.
junction temperature
◎ SEMIHOW REV.A1,March 2013
SEMIHOW [ SEMIHOW CO.,LTD. ]
