Typical Characteristics
130
120
110
100
90
16
14
12
10
8
180o
150o
30o
60o
120o
90o
90o
6
120o
150o
180o
4
60o
2
30o
0
80
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
R.M.S. on state current, IT(RMS) [A]
R.M.S. on state current, IT(RMS) [A]
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
160
140
120
100
80
101
PGM(5W)
PG(AV)(0.5W)
60Hz
50Hz
100
25[oC]
I+GT1
I-GT1
I-GT3
60
40
20
VGD
103
-1
0
10
100
101
102
104
100
101
102
Gate current, IG [mA]
Time [cycles]
Fig 4. Surge on state current rating
(Non-repetitive)
Fig 3. Gate power characteristics
2
1
0
2
1
0
I+GT1
I-GT1
I-GT3
V+GT1
-
VGT1
-
VGT3
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Junction temperature, TJ [oC]
Junction temperature, TJ [oC]
Fig 5. Gate trigger current vs.
junction temperature
Fig 6. Gate trigger voltage vs.
junction temperature
◎ SEMIHOW REV.A1,March 2013
SEMIHOW [ SEMIHOW CO.,LTD. ]
