Typical Characteristics
130
120
110
100
90
1.2
1.0
0.8
0.6
0.4
180o
150o
30o
60o
120o
90o
90o
120o
150o
60o
80
0.2
180o
30o
0.2
70
0.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.6
0.8
1.0
R.M.S. on state current, IT(RMS) [A]
R.M.S. on state current, IT(RMS) [A]
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
101
15
12
9
PGM(2W)
25[oC]
I+GT3
PG(AV)(0.2W)
60Hz
50Hz
100
25[oC]
I+GT1
I-GT1
I-GT3
6
3
VGD
-1
10
0
100
101
102
103
100
101
102
Gate current, IG [mA]
Time [cycles]
Fig 4. Surge on state current rating
(Non-repetitive)
Fig 3. Gate power characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
V+GT1
-
VGT1
I+GT1
I-GT1
I-GT3
V+GT3
-
VGT3
I+GT3
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ[oC]
Junction temperature, TJ[oC]
Fig 5. Gate trigger current vs.
junction temperature
Fig 6. Gate trigger voltage vs.
junction temperature
◎ SEMIHOW REV.A1,March 2013
SEMIHOW [ SEMIHOW CO.,LTD. ]
