Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
V
DS = VGS, ID = 250 ㎂
2.5
--
4.5
V
RDS(ON) Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 5.7 A
0.38
0.48
Ω
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 ㎂
ID = 250 ㎂, Referenced to25℃
DS = 400 V, VGS = 0 V
400
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
0.41
V/℃
/ΔTJ
Coefficient
IDSS
V
--
--
--
--
1
㎂
㎂
Zero Gate Voltage Drain Current
VDS = 320 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
1350 1750
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
180
30
240
39
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Time
--
--
--
--
--
--
--
35
120
80
80
35
7
70
240
160
160
45
㎱
㎱
VDS = 200 V, ID = 11.4 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 25 Ω
㎱
(Note 4,5)
㎱
Qg
Qgs
Qgd
nC
nC
nC
VDS = 320 V, ID = 11.4 A,
VGS = 10 V
--
(Note 4,5)
17
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
11.4
45.6
1.5
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 11.4 A, VGS = 0 V
--
V
Reverse Recovery Time
IS = 11.4 A, VGS = 0 V
310
2.3
㎱
μC
diF/dt = 100 A/μs (Note 4)
Reverse Recovery Charge
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=7mH, IAS=11.4A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤11.4A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
