Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
450
400
350
300
250
200
150
100
50
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 120V
VDS = 300V
VDS = 480V
C
iss
Coss
6
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※ Note : ID = 2.0 A
0
0
10
-1
100
101
0
1
2
3
4
5
6
7
8
9
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,July 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
