Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
101
VGS = 10V
VGS = 20V
100
150oC
25oC
∗Note :
1. VGS = 0V
∗Note : TJ = 25oC
2. 250µs Pulse Test
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
* Note : ID=7.5A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2006
SEMIHOW [ SEMIHOW CO.,LTD. ]
