Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
1000
900
800
700
600
500
400
300
200
100
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 40V
VDS = 100V
VDS = 160V
C
C
iss
6
Coss
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
4
C
rss
2
※ Note : ID = 9A
0
-1
10
100
101
0
3
6
9
12
15
18
21
24
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,July 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
